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Memory ICs > RAM Memory > K4S561632C-TC75
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K4S561632C-TC75
256Mbit SDRAM, 4M x 16Bit x 4 Banks, 133MHz (CL=3) (Update 12/03/2024)
Part No.:  K4S561632C-TC75
Date added::  05/12/2013
Brand:  Samsung
Origin:  Genuine
Package:  TSOP-II(54)
Category:  SDRAM Memory
Pricing: 
Quantity (pcs)1 - 9 10 - 24 25 - 49 50 - 99 100+
Unit price (VNĐ) 75,000 71,300 67,500 63,800 60,000
Product Unit:  pcs
In stock:  100 pcs
Views:  7574
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K4S561632C-TC75  Datasheet

256Mbit SDRAM, 4M x 16Bit x 4 Banks Synchronous DRAM LVTTL, Max. Frequency: 133MHz(CL=3)
54Pin TSOP (II) (400mil x 875mil, 0.8 mm Pin pitch)

 FEATURES
  • JEDEC standard 3.3V power supply
  • LVTTL compatible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs
    • CAS latency (2 & 3)
    • Burst length (1, 2, 4, 8 & Full page)
    • Burst type (Sequential & Interleave)
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation
  • DQM for masking
  • Auto & self refresh
  • 64ms refresh period (8K Cycle)
 GENERAL DESCRIPTION

The K4S561632C is 268,435,456 bits synchronous high data rate

Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for avariety of high bandwidth, high performance memory system applications.
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