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Memory ICs > Serial Flash Memory > EN29F002NT-70P
Images are for reference only, Please See Product Specifications
Images are for reference only, Please See Product Specifications
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EN29F002NT-70P
EN29F002NT-70P 2Megabit (256K x 8-bit) Flash Memory (Update 27/06/2023)
Part No.:  EN29F002NT-70P
Date added::  25/09/2020
Brand:  GTC
Origin:  Genuine
Package:  DIP(32)
Category:  Memory
Pricing:  1.75 (USD)
Product Unit:  pcs
In stock:  17 pcs
Views:  1492
Quantity: 
  1. Product information
EN29F002N  DataSheet
  • 2 Megabit (256K x 8-bit) Flash Memory
  • 5.0V ± 10% for both read/write operation
  • 32-pin DIP Package
FEATURES

  •  5.0V ± 10% for both read/write operation
  • Read Access Time- 45ns, 55ns, 70ns, and 90ns
  • Fast Read Access Time- 70ns with Cload = 100pF- 45ns, 55ns with Cload = 30pF
  •  Sector Architecture:One 16K byte Boot Sector, Two 8K byteParameter Sectors, one 32K byte andthree 64K byte main Sectors
  • Boot Block Top/Bottom ProgrammingArchitecture
  •  High performance program/erase speed- Byte program time: 10µs typical- Sector erase time: 500ms typical- Chip erase time: 3.5s typical
  •  Low Standby Current- 1µA CMOS standby current-typical- 1mA TTL standby current
  • Low Power Active Current- 30mA active read current- 30mA program / erase current
  • JEDEC Standard program and erasecommands
  • JEDEC standard DATA polling and togglebits feature
  • Hardware RESET Pin (n/a for EN29F002N)
  •  Single Sector and Chip Erase
  • Sector Protection / Temporary SectorUnprotect (RESET = VID)
  • Sector Unprotect Mode
  • Embedded Erase and Program Algorithms
  • Erase Suspend / Resume modes:Read and program another sector duringErase Suspend Mode
  • 0.4 µm double-metal double-polytriple-well CMOS Flash Technology
  • Low Vcc write inhibit < 3.2V
  • 100K endurance cycle
  • Package Options- 32-pin PDIP- 32-pin PLCC- 32-pin TSOP (Type 1)
  • Commercial and Industrial TemperatureRanges